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| ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * 6 amps continuous current * Up to 10 amps peak current * Very low saturation voltages SOT223 APPLICATIONS * Motor driving * Line switching * High side switches * Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE ZXTN2011GTA ZXTN2011GTC REEL SIZE 7" 13" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING ZXTN 2011 TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTN2011G ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 200 100 7 6 10 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA VALUE 42 UNIT C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTN2011G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTN2011G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R I EBO V CE(SAT) 21 50 95 180 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 100 100 30 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF 1020 920 230 200 60 20 130 26 41 1010 300 1k MIN. 200 200 100 7 TYP. 235 235 115 8.1 20 0.5 20 0.5 10 35 65 125 220 1120 1000 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C =100 A I C =1 A, RB 1k I C =10mA* I E =100 A V CB =150V VCB=150V,Tamb=100 C V CB =150V VCB=150V,Tamb=100 C V EB =6V I C =0.1A, I B =5mA* IC=1A, IB=100mA* IC=2A, IB=100mA* IC=5A, IB=500mA* I C =5A, I B =500mA* I C =5A, V CE =2V* I C =10mA, V CE =2V* IC=2A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz I C =100mA, V CE =10V f=50MHz pF ns V CB =10V, f=1MHz* I C =1A, V CC =10V, I B1 =I B2 =100mA * Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTN2011G TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTN2011G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6 |
Price & Availability of ZXTN2011GTC
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